LEAKAGE PERFORMANCE AND BREAKDOWN MECHANISM OF SILICON-RICH OXIDE ANDFLUORINATED OXIDE PREPARED BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION

The characteristics of silicon-rich oxide and fluorinated oxide (FxSiO y) films deposited in an electron cyclotron resonance chemical vapor d eposition system with SiH4 and O-2 as the oxide sources and CF4 as the fluorinating precursor are investigated in this work. According to ex perimental results, the dangling bonds in Si-rich oxide behave as posi tively by charged electron traps and degrade the dielectric strength b y lowering the barrier height for Fowler-Nordheim tunneling. On the ot her hand, a small amount of incorporated F atoms will passivate and ne utralize these excess Si dangling bonds, thereby elevating the dielect ric strength. However, too much incorporated F will degrade the pretun neling leakage performance owing to the porosity and fatigues structur e in FxSiOy film. The high leakage and even breakdown at low field str ongly limits the incorporated F concentration in FxSiOy film and the l owering of dielectric constant.