Site-directed immobilization of immunoglobulin G on 3-aminopropyltriethoxylsilane modified silicon wafer surfaces

Citation
Wp. Qian et al., Site-directed immobilization of immunoglobulin G on 3-aminopropyltriethoxylsilane modified silicon wafer surfaces, MAT SCI E C, 8-9, 1999, pp. 475-480
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
ISSN journal
09284931 → ACNP
Volume
8-9
Year of publication
1999
Pages
475 - 480
Database
ISI
SICI code
0928-4931(199912)8-9:<475:SIOIGO>2.0.ZU;2-O
Abstract
Immobilization and distribution properties of the polyclonal antibodies to hepatitis B surface antigen (anti-HBsAg) onto 3-aminopropyltriethoxylsilane (APTES) modified silicon wafer surfaces under two different kinds of coupl ing conditions were investigated using atomic force microscopy (AFM). Enzym e immunoassay (EIA) and X-ray photoelectric spectroscopy (XPS) were also us ed as the complimentary techniques to quantify a NH2-terminated siloxane mo nolayer and a antibody layer. Anti-HBsAg antibodies were site-directly immo bilized onto the APTES modified surface: (1) in acetate buffer of pH 5.2 fo r 3 days at 4 degrees C and (2) in acetate buffer of pH 5.2 containing 5 mM NaBH4 for 12 h, via aldehydes generated on the carbohydrate side chains at the C-terminal of IgG using periodate (NaIO4)-oxidized reactions. (C) 1999 Elsevier Science S.A. All rights reserved.