PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF FLUOROCARBON FILMS WITH HIGH THERMAL-RESISTANCE AND LOW DIELECTRIC-CONSTANTS

Fluorocarbon films with low dielectric constants and high thermal resi stance have been developed by plasma-enhanced chemical vapor depositio n (PECVD) using gas mixtures of fluorocarbons (e.g., C4F8), hydrocarbo ns (e.g., C2H2), and/or hydrogen. A conventional parallel plate electr ode PECVD system was used as the reactor. We report dielectric constan ts lower than 2.4 with these fluorinated films. The thermal of composi tion temperature was higher than 400 degrees C and the glass transitio n temperature (Tg) was also higher than 450 degrees C. This enables th e use of organic films with very low dielectric constant in actual dev ices.