SIMPLIFIED SIMULATION OF STEP COVERAGE IN CHEMICAL-VAPOR-DEPOSITION WITH A HEMISPHERICAL VAPOR SOURCE MODEL

A new simple, and computationally efficient model based on the arrival angle model with re-emission was developed to simulate the step cover age for low pressure chemical vapor deposition process. Instead of the Monte Carlo simulation, an analytical function for the deposition rat e based on a hemispherical vapor source model was used. Thin film depo sition profiles were obtained with an execution time much shorter than the Monte Carlo method, irrespective of the trench geometry and stick ing coefficient. Simulation results were compared with the deposition of tungsten, high temperature oxide, and tantalum oxide to show the va lidity of this model, which was confirmed.