Bonding and wetting in non-reactive metal/SiC systems: weak or strong interfaces?

Authors
Rado, C Kalogeropoulou, S Eustathopoulos, N
Citation
C. Rado et al., Bonding and wetting in non-reactive metal/SiC systems: weak or strong interfaces?, MAT SCI E A, 276(1-2), 2000, pp. 195-202
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
276
Issue
1-2
Year of publication
2000
Pages
195 - 202
Database
ISI
SICI code
0921-5093(20000115)276:1-2<195:BAWINM>2.0.ZU;2-V
Abstract
Wetting (contact angles) and bonding (work of adhesion) of Ag and binary Ag -Si alloys on basal planes of monocrystalline alpha-SiC are studied by the sessile drop technique under a static atmosphere of purified helium at 1200 degrees C. The analysis of the experimental results allows the role of eac h component of the alloy on the interfacial energies of the system and on w etting to be determined. The conclusions drawn for the Ag/SiC couple are us ed to explain wetting and bonding in other metal/SiC systems. (C) 2000 Else vier Science S.A. All rights reserved.