NiTi shape memory alloy (SMA) thin films have the potential to become high
performance actuators for micro-electromechanical systems. Low temperature
crystallized NiTi films would ensure a good compatibility with microelectro
nic processes and polymers. To avoid the drawbacks induced by annealing, we
have tried to obtain low temperature crystallized RF sputtered NiTi films
by optimising deposition parameters. We have found that NiTi films containi
ng an excess of Ti (similar to 52%) were crystallized when deposited on Si(
100) substrates heated up to only 473 K. NiTi/Si(n) Schottky diodes I-V cha
racteristics showed a temperature dependence indicating structural transiti
on in the NiTi electrode. By depositing this type of NiTi films on polymide
substrates, we obtained bimorph micro-actuators exhibiting a memory effect
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