QUANTITATIVE STUDY OF CHARGE-TO-BREAKDOWN OF THIN GATE OXIDE FOR A P(-POLY-SI METAL-OXIDE-SEMICONDUCTOR CAPACITOR (VOL 144, PG 698, 1997)())

Authors
WANG LS HUANG FS LIN MS
Citation
Ls. Wang et al., QUANTITATIVE STUDY OF CHARGE-TO-BREAKDOWN OF THIN GATE OXIDE FOR A P(-POLY-SI METAL-OXIDE-SEMICONDUCTOR CAPACITOR (VOL 144, PG 698, 1997)()), Journal of the Electrochemical Society, 144(5), 1997, pp. 1890-1890
Citations number
1
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
144
Issue
5
Year of publication
1997
Pages
1890 - 1890
Database
ISI
SICI code
0013-4651(1997)144:5<1890:QSOCOT>2.0.ZU;2-D