Simple method for accurate determination of the mean interface state density of MIS (metal/BN/InP) structures

A simple method for the determination of the mean interface density D-itm o f MIS structures is proposed. The method is based on modified bias-thermal stress measurements and combines capacitance-voltage measurements with dopi ng profile determination. The method is illustrated on InP MIS structures w ith boron nitride (BN) as an insulator. The deposition of the BN films was performed at low temperature using a microwave plasma-enhanced CVD system. The method is validated by comparison to deep level transient spectroscopy results obtained on the same test samples. (C) 1999 Elsevier Science B.V. A ll rights reserved.