R. Reuter et al., INVESTIGATION AND MODELING OF IMPACT IONIZATION WITH REGARD TO THE RFAND NOISE BEHAVIOR OF HFET, IEEE transactions on microwave theory and techniques, 45(6), 1997, pp. 977-983
A new small-signal and noise-equivalent circuit for heterostructure fi
eld-effect transistors (HFET's), including the influence of impact-ion
ization and gate-leakage current on the electronic properties, is pres
ented, The capability of the new model is demonstrated by bias-depende
nt investigations of the high-frequency (HF) (45 MHz up to 40 GHz) and
noise behavior (2 GHz up to 18 GHz) of the InAlAs/InGaAs/InP HFET, Fu
rthermore, based on these results, the bias-dependence of the newly im
plemented small-signal equivalent elements and the equivalent intrinsi
c noise sources, are discussed.