INVESTIGATION AND MODELING OF IMPACT IONIZATION WITH REGARD TO THE RFAND NOISE BEHAVIOR OF HFET

Citation
R. Reuter et al., INVESTIGATION AND MODELING OF IMPACT IONIZATION WITH REGARD TO THE RFAND NOISE BEHAVIOR OF HFET, IEEE transactions on microwave theory and techniques, 45(6), 1997, pp. 977-983
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189480
Volume
45
Issue
6
Year of publication
1997
Pages
977 - 983
Database
ISI
SICI code
0018-9480(1997)45:6<977:IAMOII>2.0.ZU;2-N
Abstract
A new small-signal and noise-equivalent circuit for heterostructure fi eld-effect transistors (HFET's), including the influence of impact-ion ization and gate-leakage current on the electronic properties, is pres ented, The capability of the new model is demonstrated by bias-depende nt investigations of the high-frequency (HF) (45 MHz up to 40 GHz) and noise behavior (2 GHz up to 18 GHz) of the InAlAs/InGaAs/InP HFET, Fu rthermore, based on these results, the bias-dependence of the newly im plemented small-signal equivalent elements and the equivalent intrinsi c noise sources, are discussed.