Gamma irradiation of semitransparent amorphous silicon sensors

Authors
Fernandez, MG Ferrando, A Josa, MI Molinero, A Oller, JC Arce, P Calvo, E Figueroa, CF Garcia, N Matorras, F Rodrigo, T Vila, I Virto, AL
Citation
Mg. Fernandez et al., Gamma irradiation of semitransparent amorphous silicon sensors, NUCL INST A, 439(1), 2000, pp. 111-116
Citations number
5
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
439
Issue
1
Year of publication
2000
Pages
111 - 116
Database
ISI
SICI code
0168-9002(20000101)439:1<111:GIOSAS>2.0.ZU;2-D
Abstract
Semitransparent amorphous silicon sensors are the key elements for laser li ght 2D position reconstruction in the CMS alignment system. Some of them ha ve to work in very extreme radiation environment. We have irradiated with g ammas, up to 10 MRad, two different sensors and measured their change in pe rformance. (C) 2000 Elsevier Science B.V. All rights reserved.