Optical properties of bismuth telluride thin films, Bi2Te3/Si(100) and Bi2Te3/SiO2/Si(100)

Authors
Kaddouri, EH Maurice, T Gratens, X Charar, S Benet, S Mefleh, A Tedenac, JC Liautard, B
Citation
Eh. Kaddouri et al., Optical properties of bismuth telluride thin films, Bi2Te3/Si(100) and Bi2Te3/SiO2/Si(100), PHYS ST S-A, 176(2), 1999, pp. 1071-1076
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
176
Issue
2
Year of publication
1999
Pages
1071 - 1076
Database
ISI
SICI code
0031-8965(199912)176:2<1071:OPOBTT>2.0.ZU;2-4
Abstract
In this work, we have studied bismuth telluride (Bi2Te3) thin films on Si(1 00) and SiO2/Si(100) substrates grown by Hot Wall Epitaxy (HWE) technique. The morphology of the surface was controlled by Atomic Force Microscopy (AF M). Reflection and transmission experiments in the midinfrared (MIR) spectr al range were performed at room temperature. We have deduced the frequency dependence of the absorption coefficient. The refractive index was determin ed in the midinfrared (MIR) spectral range for these samples and the energy band gap was evaluated.