Bound states in optical absorption of semiconductor quantum wells containing a two-dimensional electron gas

Citation
V. Huard et al., Bound states in optical absorption of semiconductor quantum wells containing a two-dimensional electron gas, PHYS REV L, 84(1), 2000, pp. 187-190
Citations number
21
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
1
Year of publication
2000
Pages
187 - 190
Database
ISI
SICI code
0031-9007(20000103)84:1<187:BSIOAO>2.0.ZU;2-G
Abstract
The dependence of the optical absorption spectrum of a semiconductor quantu m well on two-dimensional electron concentration n(e) is studied using CdTe samples. The trion peak (X-) seen at low n(e) evolves smoothly into the Fe rmi edge singularity at high n(e) The exciton peak (X) moves off to high en ergy, weakens, and disappears. The X,X- splitting is linear in n(e) and clo sely equal to the Fermi energy plus the trion binding energy. For Cd0.998Mn 0.002Te quantum wells in a magnetic field, the X,X- splitting reflects uneq ual Fermi energies for M = +/-1/2 electrons. The data are explained by Hawr ylak's theory of the many-body optical response including spin effects.