Synthesis of CuInS2 films by sulphurization of Cu/In stacked elemental layers

CuInS2, films were synthesized by sulphurization of In/Cu stacked elemental layers (SEL) deposited onto glass and Mo-coated glass substrates by graphi te box annealing at temperatures of 620-880 K, The films thus synthesized w ere characterized by measuring electrical, optical, microstructural and pho toluminescence properties, The microstructure and hence the physical proper ties of the films depended critically on the amount of sulphur incorporatio n. Nature of charge carriers depended on both Cu/In and S/(Cu + In) ratio a nd the carrier concentration varied between 10(14) and 10(18) cm(-3). Grain boundary scattering effects were critically studied by measuring the elect rical conductivity and Hall mobility simultaneously on the same sample. The shape of the grains depended critically on the sulphur content. The PL spe ctra were dominated by the excitonic peak similar to 788 nm followed by ano ther peak at similar to 892 nm which may be ascribed to the DA transition. (C) 2000 Elsevier Science B.V. All rights reserved.