A detailed account of the electrochemistry involved in the deposition of Sn
, Se and SnSe films is presented. The redox reactions and the polarization
curves of Sn and Se were studied to fix the pH and potential values V (NHE)
to get uniform deposition. Films were cathodically deposited at 55 degrees
C. XRD studies show an orthorhombic structure. Films showed an indirect ba
nd-gap of 1.05 eV. Surface morphological studies were carried out using SEM
, and the stoichiometry was estimated from XPS analysis. Effect of annealin
g in air at 200 degrees C has been reported. (C) 1999 Elsevier Science S.A.
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