Electrodeposition of Sn, Se, SnSe and the material properties of SnSe films

Citation
B. Subramanian et al., Electrodeposition of Sn, Se, SnSe and the material properties of SnSe films, THIN SOL FI, 357(2), 1999, pp. 119-124
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
357
Issue
2
Year of publication
1999
Pages
119 - 124
Database
ISI
SICI code
0040-6090(199912)357:2<119:EOSSSA>2.0.ZU;2-O
Abstract
A detailed account of the electrochemistry involved in the deposition of Sn , Se and SnSe films is presented. The redox reactions and the polarization curves of Sn and Se were studied to fix the pH and potential values V (NHE) to get uniform deposition. Films were cathodically deposited at 55 degrees C. XRD studies show an orthorhombic structure. Films showed an indirect ba nd-gap of 1.05 eV. Surface morphological studies were carried out using SEM , and the stoichiometry was estimated from XPS analysis. Effect of annealin g in air at 200 degrees C has been reported. (C) 1999 Elsevier Science S.A. All rights reserved.