Low temperature chemical vapor deposition of titanium nitride films from tetrakis(ethylmethylamido)titanium and ammonia

Authors
Panda, S Kim, J Weiller, BH Economou, DJ Hoffman, DM
Citation
S. Panda et al., Low temperature chemical vapor deposition of titanium nitride films from tetrakis(ethylmethylamido)titanium and ammonia, THIN SOL FI, 357(2), 1999, pp. 125-131
Citations number
40
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
357
Issue
2
Year of publication
1999
Pages
125 - 131
Database
ISI
SICI code
0040-6090(199912)357:2<125:LTCVDO>2.0.ZU;2-K
Abstract
Titanium nitride films were deposited from tetrakis(ethylmethylamido)titani um and ammonia at 250-350 degrees C and 0.7-2 Torr by thermal chemical vapo r deposition. The effect of process parameters such as deposition temperatu re, precursor temperature, carrier gas flow, and ammonia flow on the film p roperties was studied, the apparent activation energy of film growth was ca lculated and the film composition was determined. The film step coverage wa s better than for films grown from tetrakis(dimethylamido)titanium and ammo nia. (C) 1999 Elsevier Science S.A, All rights reserved.