Atomic scale analysis of the indium distribution in InGaAs/GaAs(001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions

Authors
Rosenauer, A Oberst, W Gerthsen, D Forster, A
Citation
A. Rosenauer et al., Atomic scale analysis of the indium distribution in InGaAs/GaAs(001) heterostructures: segregation, lateral indium redistribution and the effect of growth interruptions, THIN SOL FI, 357(1), 1999, pp. 18-21
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
357
Issue
1
Year of publication
1999
Pages
18 - 21
Database
ISI
SICI code
0040-6090(199912)357:1<18:ASAOTI>2.0.ZU;2-3
Abstract
The indium distribution in InGaAs Stranski-Krastanov layers sapped with GaA s was measured by high-resolution transmission electron microscopy combined with the CELFA evaluation technique which allows the quantitative composit ion analysis on an atomic scale. The influence of the duration of growth in terruptions between the InGaAs and GaAs cap layer deposition and the GaAs o vergrowth on the morphology and the In-content of the Stranski-Krastanov la yers was studied to assess the growth mechanisms. (C) 1999 Elsevier Science S.A. All rights reserved.