Photoluminescence studies of lateral composition modulated short-period AlAs/InAs superlattices

Authors
Jones, ED Follstaedt, DM Lee, SR Reno, JL Millunchick, JM Ahrenkiel, SP Mascarenhas, A Norman, AG Zhang, Y Twesten, RD
Citation
Ed. Jones et al., Photoluminescence studies of lateral composition modulated short-period AlAs/InAs superlattices, THIN SOL FI, 357(1), 1999, pp. 31-34
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
357
Issue
1
Year of publication
1999
Pages
31 - 34
Database
ISI
SICI code
0040-6090(199912)357:1<31:PSOLCM>2.0.ZU;2-Q
Abstract
We present low temperature photoluminescence data for a series of layers ex hibiting spontaneous lateral composition modulation in (AlAs)(m) (InAs)(n) short period superlattices grown on InP with differing average lattice cons tants, i.e. varying global strain, The low temperature photoluminescence pe ak energies were found to be much lower than the corresponding energy expec ted for the equivalent InxAl1-xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with t he 'strength' of the composition modulation wave amplitude. (C) 1999 Elsevi er Science S.A. All rights reserved.