Comparison of homogeneously grown and temperature-graded InAlAs buffers inthe range 400-560 degrees C: effects on surface morphology and layer stability
J. Arbiol et al., Comparison of homogeneously grown and temperature-graded InAlAs buffers inthe range 400-560 degrees C: effects on surface morphology and layer stability, THIN SOL FI, 357(1), 1999, pp. 61-65
We studied the surface morphology and layer stability of InGaAs/InAlAs/InP
heterostructures with their InAlAs buffers grown at temperatures in the ran
ge T-g = 400-560 degrees C, We compared samples with a temperature-graded b
uffer to those with a homogeneous buffer grown at constant temperature. Our
results demonstrate that, although the bulk of the buffer was grown at low
or high T-g, the introduction of a few nanometers grown at optimum growth
temperature improved the quality of HEMT heterostructures. (C) 1999 Elsevie
r Science S.A. All rights reserved.