The Ge segregation mechanism during Si/Ge multilayer growth has been invest
igated using medium-energy ion scattering (MEIS) and computer simulation wi
th the stochastic Monte Carlo technique. We found that Ge atoms segregated
not only in the topmost layer but also in the second and third layers. The
segregation probability is found to be quadratic in the Ge concentration at
the surface. The exchange between the second and the third layer also occu
rs readily during growth, even although these layers are buried and therefo
re are not expected to reduce the surface free energy. We found that the ac
tivation energy for the site exchange process at the subsurface is lower th
an the previously believed value, and flip-flop exchange at the subsurface
plays a more important role in the Ge segregation process. (C) 1999 Elsevie
r Science S.A. All rights reserved.