The mechanism of cubic boron nitride deposition in hydrogen plasmas

Authors
Konyashin, I Aldinger, F Babaev, V Khvostov, V Guseva, M Bregadze, A Baumgartner, KM Rauchle, E
Citation
I. Konyashin et al., The mechanism of cubic boron nitride deposition in hydrogen plasmas, THIN SOL FI, 356, 1999, pp. 96-104
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
356
Year of publication
1999
Pages
96 - 104
Database
ISI
SICI code
0040-6090(199911)356:<96:TMOCBN>2.0.ZU;2-R
Abstract
Deposition of cubic boron nitride in hydrogen plasma is thought to proceed as a result of selective etching of sp(2)-hybridized boron nitride from the surface of the growing boron nitride film, the impact of hydrogen atoms or ions leading to formation of c-BN sp(3) bonds on the surface and formation of metastable BNHx species in the gas phase. The mechanism of nucleation a nd growth of c-BN crystals in hydrogen plasmas is proposed. (C) 1999 Elsevi er Science S.A. All rights reserved.