Effect of early methane introduction on the properties of nano-seeded MPCVD-diamond films

Citation
Aa. Shaik et al., Effect of early methane introduction on the properties of nano-seeded MPCVD-diamond films, THIN SOL FI, 356, 1999, pp. 139-145
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
356
Year of publication
1999
Pages
139 - 145
Database
ISI
SICI code
0040-6090(199911)356:<139:EOEMIO>2.0.ZU;2-9
Abstract
Diamond films are attractive for both electronic and mechanical application s because of their superior hardness, strength, chemical stability, etc. Fo r applications in MEMS, very smooth thin films are desired. Our main object ive was to deposit a smooth and thin diamond film. Diamond films were depos ited on 3-inch diameter, p-type, [100] oriented silicon substrates using a microwave plasma disk reactor (MPDR). Four-nanometer diamond powder was use d for seeding the silicon wafers. In this paper, we study the effects of th e early introduction of methane. The deposition conditions were changed to introduce methane right at the beginning instead of introducing it after ab out 5 min as was done previously. Due to this change, there was a considera ble increase in nucleation density and growth rate. Very smooth films were obtained in the shorter duration depositions. The initial phase deposition revealed some graphite content in the films, which decreased with increasin g deposition time. (C) 1999 Elsevier Science S.A. All rights reserved.