Diamond films are attractive for both electronic and mechanical application
s because of their superior hardness, strength, chemical stability, etc. Fo
r applications in MEMS, very smooth thin films are desired. Our main object
ive was to deposit a smooth and thin diamond film. Diamond films were depos
ited on 3-inch diameter, p-type, [100] oriented silicon substrates using a
microwave plasma disk reactor (MPDR). Four-nanometer diamond powder was use
d for seeding the silicon wafers. In this paper, we study the effects of th
e early introduction of methane. The deposition conditions were changed to
introduce methane right at the beginning instead of introducing it after ab
out 5 min as was done previously. Due to this change, there was a considera
ble increase in nucleation density and growth rate. Very smooth films were
obtained in the shorter duration depositions. The initial phase deposition
revealed some graphite content in the films, which decreased with increasin
g deposition time. (C) 1999 Elsevier Science S.A. All rights reserved.