Diamond films have been deposited on copper substrates using hot filament c
hemical vapour deposition (HFCVD). In order to improve the nucleation densi
ty, several methods of surface pre-treatment and substrate biasing have bee
n investigated. These included polishing the substrates using a number of d
iamond powders and diamond pastes followed by ultrasonic cleaning. We show
that the nucleation density on copper is highly dependent on the particle s
ize in the polishing materials and on the polishing duration. Negative d.c.
-biasing enhances more effectively the diamond nucleation on copper than th
e abrasion process. This method is also much more controllable, reliable an
d reproducible. High quality diamond films on copper have been produced via
HFCVD using a precursor gas mixture of 1% methane in hydrogen. The as-depo
sited diamond films were characterised for film morphology, crystallinity,
film quality and phase purity by scanning electron microscopy (SEM) and Ram
an spectroscopy. Raman spectroscopy analysis revealed an intense diamond pe
ak at around 1332 cm(-1) and nearly no graphite band. Diamond crystals of p
redominantly [111] orientation were evident from SEM analysis, Both the dia
mond phase purity and the nucleation density were enhanced in films deposit
ed by the bias-enhanced nucleation (BEN) method as compared to the diamond
deposited on abraded copper substrates. (C) 1999 Elsevier Science S.A. All
rights reserved.