CNx thin films grown by pulsed laser deposition: Raman, infrared and X-rayphotoelectron spectroscopy study

Citation
S. Trusso et al., CNx thin films grown by pulsed laser deposition: Raman, infrared and X-rayphotoelectron spectroscopy study, THIN SOL FI, 356, 1999, pp. 219-222
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
356
Year of publication
1999
Pages
219 - 222
Database
ISI
SICI code
0040-6090(199911)356:<219:CTFGBP>2.0.ZU;2-M
Abstract
Carbon nitride films have been deposited by pulsed laser ablation of graphi te targets in a controlled nitrogen atmosphere. The samples composition was determined by means of X-ray photoelectron spectroscopy. A study of the C 1s and N 1s core level photoemission bands evidenced, upon increasing nitro gen gas partial pressure, the continuous increase of the nitrogen content, along with a systematic modification of the components related to both trig onal and tetrahedral CN bonding configuration. Nitrogen atomic contents up to 30%, with respect to carbon, were estimated. Raman and infrared spectros copy results showed broad and featureless structures typical of an amorphou s carbon phase. On the whole they confirm a progressive raise of the number of N atoms bonded to sp(2)-hybridized C when increasing the nitrogen parti al pressure. (C) 1999 Elsevier Science S.A. All rights reserved.