XPS analyses of TiN films on Cu substrates after annealing in the controlled atmosphere

X-ray photoelectron spectroscopy (XPS) has been used to investigate the the rmal annealing of TIN films in the controlled atmosphere. The films were pr epared by a cathodic are plasma deposition technique on Cu substrates. The flowing gases used in the annealing are air, N-2, Ar, and CO2/N-2/H-2 gas m ixtures, which possess extremely different nitrogen and oxygen partial pres sures. Annealing the samples in air at 300, 400, and 500 degrees C causes t he gradual transformation from amorphous TiO2 to crystalline TiO2 on the Ti N surface. Annealing in N-2 and Ar at slightly different temperatures resul ts in various adsorbed nitrogen states. After annealing in CO2/N-2/H-2 = 10 : 81 : 9 and N-2/H-2 = 9 gas mixtures from 400 degrees C to 700 degrees C, the relative intensity of crystalline TiO2 increases with temperature and that of titanium oxynitride decreases. The adsorbed nitrogen associated wit h the oxidation of TiN is discussed. The TiN oxidation chemistry under thes e controlled oxygen and nitrogen partial pressures is also discussed. (C) 1 999 Elsevier Science S.A. All rights reserved.