Effect of processing parameters on the microstructure and mechanical properties of TiN film on stainless steel by HCD ion plating

Citation
Jh. Huang et al., Effect of processing parameters on the microstructure and mechanical properties of TiN film on stainless steel by HCD ion plating, THIN SOL FI, 356, 1999, pp. 440-445
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
356
Year of publication
1999
Pages
440 - 445
Database
ISI
SICI code
0040-6090(199911)356:<440:EOPPOT>2.0.ZU;2-8
Abstract
The effect of operation parameters, bias and nitrogen partial pressure in t he microstructure and properties of titanium nitride (TiN) films was invest igated. The films were grown using hollow cathode discharge ion plating (HC D-IP) on stainless steel. The structure was studied using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Cross-sectional TEM (XTE M) was used to study the effect of bias, nitrogen partial pressure and pre- deposited Ti-interlayer on the microstructure of TiN films. Plane-view TEM was also employed to measure the grain size of the films. The values of har dness of the films were measured using an ultramicrohardness tester. The re sults showed that the hardness of the films ranged from 1686-3120 kgf/mm(2) . The increase in bias enhanced (111) preferred orientation and columnar st ructure in TiN films. introducing insufficient nitrogen pressure lowered th e crystallinity of the films. The presence of a (0001) preferred orientatio n in the pre-deposited Ti interlayer enhanced (Ill)preferred orientation in TiN films. This may be due to the similar atomic packing between (111) in TiN and (0001) in Ti. High hardness of TiN films was found to be associated with a large amount of Ti2N and smaller grain size. The order of the facto rs, which influence the hardness of the TiN film, is the presence of Ti2N, grain size of TiN, and (111) preferred orientation. (C) 1999 Elsevier Scien ce S.A. All rights reserved.