STRUCTURE, ELECTRICAL AND CHEMICAL-PROPERTIES OF ZIRCONIUM NITRIDE FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

Authors
WU D ZHANG Z FU W FAN X GUO H
Citation
D. Wu et al., STRUCTURE, ELECTRICAL AND CHEMICAL-PROPERTIES OF ZIRCONIUM NITRIDE FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING, Applied physics A: Materials science & processing, 64(6), 1997, pp. 593-595
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
64
Issue
6
Year of publication
1997
Pages
593 - 595
Database
ISI
SICI code
0947-8396(1997)64:6<593:SEACOZ>2.0.ZU;2-V
Abstract
Zirconium nitride films were deposited by de re active magnetron sputt ering at a substrate temperature of 320 degrees C in an N-2 and Ar amb ient. X-ray diffraction indicated that growth of ZrN with a preferred (111) orientation over Si(100) was achieved. The resistivity of the fi lms varies from 200 mu Omega cm to 15 mu Omega cm depending on the N-2 content in the working gas. The square resistance of the films deposi ted on 96% Al2O3 ceramic wafers is stable below 300 degrees C.