In situ analysis of high energetic ion RBS combined with low energetic ionsputtering for thin films

With an experimental system composed of an ion gun and a RES analysis chamb er, in situ analysis of low energetic ion sputtering and high energetic ion RES for thin films is carried out. We analyze, for three kinds of samples, their compositions and deeply-buried layers. In the analysis of Au/Si samp le, the sputtering rate of Au with Ar+ etching is discussed and in the anal ysis of deeply-buried layers of Si/Ge-Si/Si and WSix/SiO2/Si samples, the d epth resolution is obviously improved. The advantages and disadvantages of this analytical method in thin film studies, as well as its potential appli cations, are discussed.