Effect of high-temperature treatment on the crystallization of CNx thin films

Citation
Xc. Xiao et al., Effect of high-temperature treatment on the crystallization of CNx thin films, ACT PHY C E, 49(1), 2000, pp. 173-176
Citations number
12
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
49
Issue
1
Year of publication
2000
Pages
173 - 176
Database
ISI
SICI code
1000-3290(200001)49:1<173:EOHTOT>2.0.ZU;2-6
Abstract
The amorphous carbon nitride films were prepared by de magnetron sputtering first, and then were heat-treated at high temperature. DTA, XRD, Auger spe ctroscopy were used to study the difference of composition, structure befor e and after heat-treatment. The results showed that crystallization occurre d at 1186 degrees C. Heat-treatment: can induce the crystallization of carb on nitride and the diffraction peaks appeared in the XRD pattern. The resul ts of Auger spectroscopy also showed that: there existed SiCN-riched area a nd the content of N decreased.