A SCHOTTKY-BARRIER JUNCTION BASED ON NANOMETER-SCALE INTERPENETRATINGGAP GOLD NETWORKS/

Communication: An interpenetrating GaP and gold nanometer-scale networ k system has been formed by electrochemical deposition of the metal on a nanoporous n-type semiconductor GaP network. The electrical charact eristics of the system-in particular capacitance and current-voltage m easurements-indicate that a semiconductor/metal Schottky barrier junct ion with a huge internal contact area is produced, which could find ap plications in solid-state electronic devices.