New molecular compound precursor for aluminum chemical vapor deposition

A new type of precursor for aluminum chemical vapor deposition (AI-CVD) has been developed by mixing dimethylaluminum hydride (DMAH) and trimethylalum inum (TMA). The new precursor has proven itself to be effective for Al-CVD, where a good selectivity between the Si and the SiO2 mask, a 3.0 mu Omega cm resistivity and a pure Al film with low C and O contamination levels (un der 100 ppm) were achieved. Quadrupole mass and infrared absorption analysi s have shown that the precursor contains a new molecular compound, consisti ng of a DMAH monomer and a TMA monomer, The mixture has lower viscosity tha n DMAH and can be easily bubbled for a stable precursor vapor supply. Copyr ight (C) 2000 John Wiley & Sons, Ltd.