Pulsed laser deposition of carbon nitride films by a sub-ps laser

Citation
Z. Geretovszky et al., Pulsed laser deposition of carbon nitride films by a sub-ps laser, APPL PHYS A, 70(1), 2000, pp. 9-11
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
70
Issue
1
Year of publication
2000
Pages
9 - 11
Database
ISI
SICI code
0947-8396(200001)70:1<9:PLDOCN>2.0.ZU;2-X
Abstract
CNx (0.01 < x < 0.06) films were grown from a graphite target by pulsed las er deposition in a low-pressure nitrogen environment at room temperature, u sing a sub-ps ultraviolet laser. With increasing nitrogen pressure from 3 x 10(-2) to 0.6 mbar the nitrogen content of the films increases monotonousl y, as determined by X-ray photoelectron spectroscopy. Raman spectroscopy re veals that the films consist predominantly of highly amorphous carbon.