Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates

We report on fabrication and characterization of blue GaN-InGaN multi-quant um well (MQW) light-emitting diodes (LEDs) over (111) silicon substrates. D evice epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor deposition growth proc edure in selective areas defined by openings in a SiO2 mask over the substr ates. This selective area deposition procedure in principle can produce mul ticolor devices using a very simple fabrication procedure. The LEDs had a p eak emission wavelength of 465 nm with a full width at half maximum of 40 n m. We also present the spectral emission data with the diodes operating up to 250 degrees C. The peak emission wavelengths are measured as a function of both dc and pulse bias current and plate temperature to estimate the the rmal impedance. (C) 2000 American Institute of Physics. [S0003-6951(00)0110 3-7].