Straight beta-SiC nanorods synthesized by using C-Si-SiO2

Straight beta-silicon carbide nanorods have been grown on silicon wafers us ing hot filament chemical vapor deposition with iron particles as catalyst. A plate made of a C-Si-SiO2 powder mixture was used as carbon and silicon sources. Hydrogen, which was the only gas fed into the deposition system, a cts both as a reactant and as a mass transporting medium. The diameter of t he beta-SiC nanorod ranged from 20 to 70 nm, while its length was approxima tely 1 mu m. A growth mechanism of beta-silicon carbide nanorods was propos ed. The field emission properties of the beta-silicon carbide nanorods grow n on the silicon substrate are also reported. (C) 2000 American Institute o f Physics. [S0003-6951(00)03203-4].