Effect of dopant atoms on the roughness of III-V semiconductor cleavage surfaces

Authors
Quadbeck, P Ebert, P Urban, K Gebauer, J Krause-Rehberg, R
Citation
P. Quadbeck et al., Effect of dopant atoms on the roughness of III-V semiconductor cleavage surfaces, APPL PHYS L, 76(3), 2000, pp. 300-302
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
3
Year of publication
2000
Pages
300 - 302
Database
ISI
SICI code
0003-6951(20000117)76:3<300:EODAOT>2.0.ZU;2-9
Abstract
We demonstrate that the presence of dopant atoms influences the roughness, morphology, and optical mirror properties of III-V semiconductor (110) clea vage surfaces. High concentrations of Te dopant atoms in GaAs lead to macro scopically curvatured (110) cleavage surfaces with high step concentrations . This "glass-like" fracture behavior is explained by the "lattice superdil ation phenomenon" induced by high concentrations of Te dopant atoms in GaAs . (C) 2000 American Institute of Physics. [S0003-6951(00)02303-2].