X-ray microdiffraction study of Cu interconnects

Citation
X. Zhang et al., X-ray microdiffraction study of Cu interconnects, APPL PHYS L, 76(3), 2000, pp. 315-317
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
3
Year of publication
2000
Pages
315 - 317
Database
ISI
SICI code
0003-6951(20000117)76:3<315:XMSOCI>2.0.ZU;2-D
Abstract
We have used x-ray microdiffraction to study the local structure and strain variation of copper interconnects. Different types of local microstructure s have been found in different samples. Our data show that the Ti adhesion layer has a very dramatic effect on Cu microstructure. Strain measurement w as conducted before and after electromigration test, Cu fluorescence was us ed to find the mass variations around voids and hillocks, and x-ray microdi ffraction was used to measure the strain change around that interested regi on. (C) 2000 American Institute of Physics. [S0003-6951(00)03903-6].