Size-dependent electron-hole exchange interaction in Si nanocrystals

Silicon nanocrystals with diameters ranging from approximate to 2 to 5.5 nm were formed by Si ion implantation into SiO2 followed by annealing. After passivation with deuterium, the photoluminescence (PL) spectrum at 12 K pea ks at 1.60 eV and has a full width at half maximum of 0.28 eV. The emission is attributed to the recombination of quantum-confined excitons in the nan ocrystals. The temperature dependence of the PL intensity and decay rate at several energies between 1.4 and 1.9 eV was determined between 12 and 300 K. The temperature dependence of the radiative decay rate was determined, a nd is in good agreement with a model that takes into account the energy spl itting between the excitonic singlet and triplet levels due to the electron -hole exchange interaction. The exchange energy splitting increases from 8. 4 meV for large nanocrystals (approximate to 5.5 nm) to 16.5 meV for small nanocrystals (approximate to 2 nm). For all nanocrystal sizes, the radiativ e rate from the singlet state is 300-800 times larger than the radiative ra te from the triplet state. (C) 2000 American Institute of Physics. [S0003-6 951(00)04402-8].