Switching properties of SrBi2Ta2O9 thin films produced by metalorganic decomposition

Authors
Chen, XB Yan, F Li, CH Zhang, ZG Zhu, JS Wang, YN
Citation
Xb. Chen et al., Switching properties of SrBi2Ta2O9 thin films produced by metalorganic decomposition, APPL PHYS L, 76(3), 2000, pp. 369-371
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
3
Year of publication
2000
Pages
369 - 371
Database
ISI
SICI code
0003-6951(20000117)76:3<369:SPOSTF>2.0.ZU;2-B
Abstract
The process of polarization reversal in a SrBi2Ta2O9 (SBT) thin film capaci tor produced by a metalorganic decomposition method was investigated. The s witching time (100-600 ns) and the reversible polarization have been measur ed at different voltages in the range of 0-5 V. It was found that by anneal ing the SBT sample in AR atmosphere at 400 degrees C, the switching times w ere significantly reduced. This indicates that oxygen vacancies in the film speed up nucleation and growth of new domains. (C) 2000 American Institute of Physics. [S0003-6951(00)04203-0].