The oriented growth of PbLaTiO3 (PLT) and ZnO thin films on (100)InP has be
en studied, including the influence of buffer oxide layers (CeO2, ZrO2, SrO
, YSZ, MgO, and SrTiO3) on the final texture of PLT film obtained. In each
case the oxygen pressure, substrate temperature, energy fluence and substra
te surface conditions required to obtain a crystalline and preferentially o
riented phase have been established. The composition and morphological chan
ges related to the PLT/YSZ/(100)InP heterostructure profile have been studi
ed in order to investigate the processes involved in the growth of these ox
ides on (100)InP.