Low-voltage fully differential switched-current memory cell

Authors
Balachandran, GK Allen, PE
Citation
Gk. Balachandran et Pe. Allen, Low-voltage fully differential switched-current memory cell, ELECTR LETT, 35(25), 1999, pp. 2200-2201
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
25
Year of publication
1999
Pages
2200 - 2201
Database
ISI
SICI code
0013-5194(199912)35:25<2200:LFDSMC>2.0.ZU;2-8
Abstract
A fully differential switched-current (SI) memory cell with a new common-ma de feedback technique is presented. The cell achieves a lower voltage of op eration (V-dd,V-min = V-t + 3V(ds,sat)) than that (V-dd,V-min = 2V(t) + 4V( ds,sat)) of its conventional counterpart, by using a new common-mode curren t sensing technique.