High power operation of real refractive index guided self-aligned AlGalnP laser diodes with window structure

Citation
T. Onishi et al., High power operation of real refractive index guided self-aligned AlGalnP laser diodes with window structure, ELECTR LETT, 35(25), 1999, pp. 2208-2209
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
25
Year of publication
1999
Pages
2208 - 2209
Database
ISI
SICI code
0013-5194(199912)35:25<2208:HPOORR>2.0.ZU;2-#
Abstract
A window-mirror structure has been applied by Zn diffusion to real refracti ve index guided self-aligned AlGaInP laser diodes for the First time. Both a high catastrophic optical damage level of 152mW and a high slope efficien cy of 0.83W/A have been obtained, resulting in an extremely low operating c urrent of 225mA. for a pulse output power of 150mW at room temperature.