High-frequency response limitation of high-performance InAlGaAs/InAlAs superlattice avalanche photodiodes

Authors
Makita, K Nakata, T Watanabe, I Taguchi, K
Citation
K. Makita et al., High-frequency response limitation of high-performance InAlGaAs/InAlAs superlattice avalanche photodiodes, ELECTR LETT, 35(25), 1999, pp. 2228-2229
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
25
Year of publication
1999
Pages
2228 - 2229
Database
ISI
SICI code
0013-5194(199912)35:25<2228:HRLOHI>2.0.ZU;2-R
Abstract
InAlGaAs/InAlAs superlattice avalanche photodiodes (SL-APDs) have been inve stigated for use in high bit rate optical communication systems. The high f requency response limitation of high-performance InAlGaAs/InAlAs SL-APDs is reported. For a thin avalanche layer of 0.126 mu m, a gain bandwidth produ ct of 200GHz and a multiplied dark current of 700nA have been attained. The se values are sustainable for use in practical systems at 20Gbit/s.