Electrical stress damage reversal in nonpassivated fully self-aligned InPHBTs by ozone surface treatment

The authors report that the degradation of device characteristics due to el ectrical stressing in non-passivated fully self-aligned InP-based heterostr ucture bipolar transistors (HBTs) can be reversed by a simple surface treat ment in ozone. The technique is demonstrated on MOCVD-grown InP/GaAs0.49/Sb -0.49/InP double heterostructure bipolar transistors (DHBTs) with a C-doped base, and on conventional MBE-grown InP/Ga0.47In0.53As single heterostruct ure bipolar transistors (SHBTs) with a Be-doped base. This is the first rep ort of the reversibility of bias stress damage in the extrinsic region of I II-V HBTs: the experiments presented confirm that stress damage occurs at t he exposed emitter periphery, thus explaining the success of emitter ledge passivation techniques.