Formation of local p(+) region in ZnSe by Cu3Ge contact

Cu3Ge/Pt/Au has been deposited onto the surface of p-ZnSe, n(+)-ZnSe and n- ZnSe. It was found that the observed Cu3Ge/pZnSe ohmic behaviour is due mai nly to hole tunnelling through the metal/semiconductor interface. A p(+)-n junction-like I-V characteristic for Cu3Ge/n-ZnSe was also observed. Furthe rmore, a negative differential resistance with a peak-to-valley ratio of si milar to 6 was observed under forward bias when Cu3Ge was deposited onto,n( +)-ZnSe. These observations all suggest that Cu3Ge can form a local p(+) re gion on the ZnSe surface.