A BSIM3-based flat-band voltage perturbation model for RTS and 1/f noise

Recently, a nea random telegraph signal (RTS) noise model for the drain cur rent fluctuations (Delta I-d) associated with single-carrier trapping and d etrapping has been developed from a flat-band voltage perturbation (Delta V -fb) of the BSIM3 current-voltage (I-V) model [5]. The model's accuracy in predicting the gate bias and geometry dependence of RTS magnitudes has been verified and summarized in [5]. In this letter the perturbation model has been extended to yield a nea formulation for the scattering coefficient (al pha) which predicts the magnitude and bias dependence of 1/f noise without fitting parameters. The absence of fitting parameters allows for a direct d etermination of the oxide trap density (N-t(Ef(n))) from 1/f noise measurem ents. Results suggest that the BSIM3-based model accurately predicts the bi as and geometry dependence of 1/f noise, that N2O annealing may significant ly increase the oxide trap density at strong inversion and that the bias de pendence of N-t(Ef(n)) contains most of the 1/f noise dependence upon V-g.