A new five-parameter MOS transistor mismatch model

A new five-parameter MOS transistor mismatch model is introduced capable of predicting transistor mismatch with very high accuracy for ohmic and satur ation regions, including short-channel transistors. The new model is based on splitting the contribution of the mobility degradation parameter mismatc h ae into two components, and modulating them as the transistor transitions from ohmic to saturation regions. The model is tested for a wide range of transistor sizes (30), and shows excellent precision, never reported before for such a wide range of transistor sizes, including short-channel transis tors.