Ultralow-threshold cryogenic vertical-cavity surface-emitting laser

Citation
Z. Zou et al., Ultralow-threshold cryogenic vertical-cavity surface-emitting laser, IEEE PHOTON, 12(1), 2000, pp. 1-3
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
1
Year of publication
2000
Pages
1 - 3
Database
ISI
SICI code
1041-1135(200001)12:1<1:UCVSL>2.0.ZU;2-D
Abstract
Data are presented characterizing a low-threshold vertical-cavity surface-e mitting laser designed for cryogenic operation, A threshold current of 12 m u A and current density of 25 A/cm(2) are obtained at 77 K with the low-los s cavity design. From 77 K to 160 K, the threshold increases linearly with temperature, but only approximately tracks the detuning of the cavity reson ance from the minimum energy transition of the quantum well. At 77 K, we es timate that the 25-A/cm(2) threshold current density is about twice that re quired for transparency.