1.58-mu m lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers

Authors
Liu, GT Stintz, A Pease, EA Newell, TC Malloy, KJ Lester, LF
Citation
Gt. Liu et al., 1.58-mu m lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers, IEEE PHOTON, 12(1), 2000, pp. 4-6
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
1
Year of publication
2000
Pages
4 - 6
Database
ISI
SICI code
1041-1135(200001)12:1<4:1MLASD>2.0.ZU;2-O
Abstract
A versatile, digital-alloy molecular beam epitaxy (MBE) technique is employ ed to grow lattice-matched and strained AIGaInAs multiple-quantum well (MQW ) 1.58-mu m laser diodes on InP. A threshold current density as low as 510 A/cm(2) has been demonstrated for broad area lasers with 1% strained AIGaIn As MQW's, which is the best MBE result in this material system. A single fa cet pulsed power as high as 0.56 W is obtained. It is also found that the e fficiency and internal loss of digital alloy AIGaInAs QW devices are compar able to lasers grown by conventional MBE.