Efficient continuous-wave lasing operation of a narrow-stripe oxide-confined GaInNAs-GaAs multiquantum-well laser grown by MOCVD

Authors
Yang, K Hains, CP Cheng, JL
Citation
K. Yang et al., Efficient continuous-wave lasing operation of a narrow-stripe oxide-confined GaInNAs-GaAs multiquantum-well laser grown by MOCVD, IEEE PHOTON, 12(1), 2000, pp. 7-9
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
1
Year of publication
2000
Pages
7 - 9
Database
ISI
SICI code
1041-1135(200001)12:1<7:ECLOOA>2.0.ZU;2-9
Abstract
Efficient continuous-wave lasing operation has been achieved above room tem perature by a triple-quantum-well GaInNAs-GaAs laser diode grown on a 6 deg rees-misoriented GaAs substrate by MOCVD.Using a planar, oxide-confined, na rrow-stripe (8 mu m) laser geometry, continuous-wave lasing operation was a chieved over a wide range of temperatures up to 57 degrees C. At room tempe rature, lasing occurs at a wavelength of 1.16 mu m, with a high single-face t slope efficiency of 25% and a threshold current density of 1.3 kA/cm(2).