lA novel method for the fabrication of cleaved-cavities has been developed
that uses a copper plate assembly to support semiconductor layers after sub
strate removal. PbSe layers were grown through a combination of molecular b
eam epitaxy and liquid phase epitaxy on Si (100) substrates using CaF2 and
BaF2 buffer layers. After growth the sample was bonded to the edges of a co
pper plate assembly epilayer down and the BaF2 buffer layer was etched away
allowing for growth substrate removal. This technique allows fabrication o
f cleaved Fabry-Perot resonant cavities by separating the copper plates aft
er the substrate is removed.