A physics-based semiconductor noise model suitable for efficient numericalimplementation

A semiconductor de,ice noise model in the framework of semiclassical transp ort and Pauli's exclusion principle is presented. Terminal current noise is modeled as a direct consequence of electron scattering taking place inside the device at the microscopic level. The approach directly connects electr on scattering rates of semiclassical transport theory with the current spec tral density at the device terminals. It is shown that the spectral density of steady-state current fluctuations can be obtained from the transient so lution of the Boltzmann transport equation with special initial conditions, This formulation is inherently suitable for deterministic solution techniq ues, for instance, the computationally efficient spherical harmonics method , Approximating the instantaneous value of the occupation number by the occ upation probability, this model is able to account far Pauli's principle an d at the same time describe the behavior of the electron ensemble in terms of independent entities. As a practical demonstration, the model is employe d to compute the current noise spectral density due to generation recombina tion and acoustic and optical phonon scattering for bulk n-type silicon mat erial. Additionally, in order to add more physical insight and to verify re sults, the model is also employed to compute the low-frequency current spec tral density as a function of the electric held and temperature, respective ly. The results show good agreement with low-frequency noise measurements r eported in literature.